This resulted within a decreased perform function plus the formation of a Schottky Call amongst the BrGO and n-sort Si substrate. As a consequence of the higher proportion of B-C and B-C3 bonding from the BrGO/Si product than that inside the rGO/Si, the reduced Schottky barrier peak of the BrGO/n-Si https://www.directivepublications.org/journal-of-applied-nanoscience/